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Same model may have multiple batches, images only for reference.
IXFN140N20P Real Image
Same model may have multiple batches, images only for reference.

IXFN140N20P

Part No IXFN140N20P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
IXFN140N20P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Polar
Package Box
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 115A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
Rds On (Max) @ Id, Vgs 18mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7500 pF @ 25 V
Power Dissipation (Max) 680W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN140
Standard Package 10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278260-IXFN140N20P
Ultra Librarian 3D Model Ultra Librarian IXFN140N20P CAD Model

Description

The IXYS IXFN140N20P is an N-channel MOSFET (Metal Oxide) electronic component that is designed for use in various discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 200V
  • Current Continuous Drain (Id): 115A (Tc) @ 25°C
  • Package Style: SOT-227-4, miniBLOC
  • Mounting: Chassis Mount
  • Gate Charge (Qg): 240 nC @ 10V
  • Input Capacitance (Ciss): 7500 pF @ 25V
  • Vgs(th) (Max): 5V @ 4mA
  • Power Dissipation (max): 680W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $50.1127 $50.1127
3+ $41.1182 $123.3546
4+ $39.8332 $159.3328
6+ $38.5483 $231.2898
7+ $37.2633 $260.8431
9+ $33.4085 $300.6765
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