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IXFN55N50

Part No IXFN55N50
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 55A SOT-227B / N-Channel 500 V 55A (Tc) 625W (Tc) Chassis Mount SOT-227B
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 330 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V
Power Dissipation (Max) 625W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 470724
Standard Package 10
Win Source Part Number 1324112-IXFN55N50
Ultra Librarian 3D Model Ultra Librarian IXFN55N50 CAD Model

Description

The IXFN55N50 is a N-channel MOSFET transistor manufactured by IXYS.

  • Mounting Style: chassis mount
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 55A @ 25°C
  • Maximum On-Resistance: 90mOhm @ 27.5A and 10V
  • Gate Charge: 330nC @ 10V
  • Input Capacitance: 9400pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Voltage Threshold: 4.5V @ 8mA
  • Package: SOT-227B package
  • Power Dissipation: 625W
  • Obsolete: Yes
  • ROHS3 Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.6410 $62.5640
9+ $12.8344 $115.5096
14+ $12.4324 $174.0536
20+ $12.0316 $240.6320
25+ $11.6309 $290.7725
34+ $10.4273 $354.5282
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 312 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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