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Same model may have multiple batches, images only for reference.
IXFN70N100X Real Image
Same model may have multiple batches, images only for reference.

IXFN70N100X

Part No IXFN70N100X
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 56A SOT227B / N-Channel 1000 V 56A (Tc) 1200W (Tc) Chassis Mount SOT-227B
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 89mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 6V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 350 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 9150 pF @ 25 V
Power Dissipation (Max) 1200W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXFN70
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1323972-IXFN70N100X
Ultra Librarian 3D Model Ultra Librarian IXFN70N100X CAD Model

Description

The IXYS IXFN70N100X is an electronic component that is manufactured by IXYS.

  • Type: MOSFET (Metal Oxide)
  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id): 56A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V
  • Win Source Part Number: 1323972-IXFN70N100X
  • Packaging: Tube
  • Standard Package: 10
  • Mounting Type: Chassis Mount
  • Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single

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