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IXFP22N60P3

Part No IXFP22N60P3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 22A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1.5mA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 2600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 360 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049505-IXFP22N60P3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFP22N60P3 CAD Model

Description

IXYS' IXFP22N60P3 is a through-hole MOSFET with an N-Channel polarity, capable of handling a maximum drain-source breakdown voltage of 600V and a continuous drain current of 22A (Tc).

  • Mounting: through-hole
  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 22A (Tc)
  • Power Dissipation: 500W (Tc)
  • Drive Voltage: 10V (max Rds On, min Rds On)
  • Package: TO-220AB
  • Dimension: TO-220-3
  • Gate-Source Threshold Voltage: 5V @ 1.5mA
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Input Capacitance: 2600pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On at Id, Vgs: 360 mOhm @ 11A, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.7826 $60.5216
38+ $3.1046 $117.9748
58+ $3.0076 $174.4408
80+ $2.9106 $232.8480
103+ $2.8136 $289.8008
138+ $2.5225 $348.1050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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