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IXFP26N50P3

Part No IXFP26N50P3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 26A TO220AB  /  N-Channel 500 V 26A (Tc) 500W (Tc) Through Hole TO-220-3
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Polar3™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2220 pF @ 25 V
Power Dissipation (Max) 500W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXFP26
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1028159-IXFP26N50P3
Ultra Librarian 3D Model Ultra Librarian IXFP26N50P3 CAD Model

Description

This discrete semiconductor component is an N-Channel MOSFET transistor with a Win Source part number of 1028159-IXFP26N50P3.

  • Manufacturer: IXYS
  • Product Name: IXFP26N50P3
  • Win Source Part Number: 1028159-IXFP26N50P3
  • Type: N-Channel MOSFET transistor
  • Series: HiPerFET™, Polar3™
  • Maximum Drain to Source Voltage: 500V
  • Continuous Drain Current @ 25°C: 26A (Tc)
  • Maximum Power Dissipation: 500W (Tc)
  • Mounting: Through a TO-220-3 hole
  • Gate Charge @ 10 V: 42 nC
  • Input Capacitance @ 25 V: 2220 pF

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.0075 $64.0300
8+ $13.1344 $105.0752
12+ $12.7239 $152.6868
17+ $12.3135 $209.3295
22+ $11.9030 $261.8660
29+ $10.6717 $309.4793
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,805 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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