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Same model may have multiple batches, images only for reference.
IXFP30N60X Real Image
Same model may have multiple batches, images only for reference.

IXFP30N60X

Part No IXFP30N60X
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 30A TO220 / N-Channel 600 V 30A (Tc) 500W (Tc) Through Hole TO-220
Datasheet
IXFP30N60X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 155mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2270 pF @ 25 V
Power Dissipation (Max) 500W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220
Case / Package TO-220-3
Base Product Number IXFP30
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1324370-IXFP30N60X
Ultra Librarian 3D Model Ultra Librarian IXFP30N60X CAD Model

Description

The IXYS IXFP30N60X is a N-channel MOSFET transistor that comes in a TO-220 package.

  • Drain to Source Voltage: 600V
  • Continuous Drain Current: 30A @ 25°C
  • Maximum On-Resistance: 155mOhm @ 15A and 10V
  • Gate Charge: 56nC @ 10V
  • Input Capacitance: 2270pF @ 25V
  • Power Dissipation: 500W @ Tc
  • Mounting Type: through hole applications

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