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Same model may have multiple batches, images only for reference.
IXTA34N65X2-TRL Real Image
Same model may have multiple batches, images only for reference.

IXTA34N65X2-TRL

Part No IXTA34N65X2-TRL
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 34A TO263 / N-Channel 650 V 34A (Tc) 540W (Tc) Surface Mount TO-263 (D2Pak)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Ultra X2
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 96mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V
Power Dissipation (Max) 540W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Base Product Number IXTA34
Standard Package 800
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346881-IXTA34N65X2-TRL
Ultra Librarian 3D Model Ultra Librarian IXTA34N65X2-TRL CAD Model

Description

The IXTA34N65X2-TRL is a N-channel MOSFET transistor from the Ultra X2 series of IXYS. It features a drain to source voltage of 650V and a power dissipation of 540W (Tc).

  • Series: Ultra X2
  • Drain to Source Voltage: 650V
  • Power Dissipation: 540W (Tc)
  • Mounting Type: Surface Mount
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Gate-Source Voltage: ±30V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Current-Continuous Drain: 34A (Tc)
  • On-Resistance: 96mOhm @ 17A and 10V

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