The IXFP34N65X3 is a HiPerFET™ Ultra X3 N-channel MOSFET transistor designed for use in discrete semiconductor products. With a drain to source voltage (Vdss) of 650V, this transistor is capable of continuous drain current (Id) of 34A (Tc) @ 25°C.

• Drain to Source Voltage (Vdss): 650V
• Continuous Drain Current (Id): 34A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
• Power Dissipation (Max): 446W (Tc)
• Mounting Type: through-hole
• Package: 50
• Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V
• Temperature Range: -55°C to 150°C (TJ)
• ECCN: EAR99
• MSL Level: 1 (Unlimited)
• HTSUS: 8541.29.0095
• Manufacturer: IXYS