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Same model may have multiple batches, images only for reference.
IXFP4N100PM
Same model may have multiple batches, images only for reference.

IXFP4N100PM

Part No IXFP4N100PM
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 2.1A TO220
Datasheet
IXFP4N100PM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™, Polar
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1456 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Isolated Tab
Package / Case TO-220-3 Full Pack, Isolated Tab
Base Product Number IXFP4N100
Standard Package 50 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 876091-IXFP4N100PM
Ultra Librarian 3D Model Ultra Librarian IXFP4N100PM CAD Model

Description

The 876091-IXFP4N100PM is a high-performance N-Channel MOSFET designed for discrete semiconductor applications.

  • Drain to Source Voltage: 1000V
  • Continuous Drain Current: 2.1A @ 25°C
  • On-Resistance: 3.3Ohm @ 2A and 10V
  • Package: TO-220-3 full pack with an isolated tab
  • Gate Charge: 26nC @ 10V
  • Input Capacitance: 1456pF @ 25V
  • Operating Temperature Range: -55°C to 150°C
  • Active product from: IXYS

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48+ $2.0898 $100.3104
75+ $2.0245 $151.8375
103+ $1.9592 $201.7976
133+ $1.8939 $251.8887
177+ $1.6980 $300.5460
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Availability: 2,300 pieces
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