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IXFR55N50

Part No IXFR55N50
Manufacturer IXYS
Catalog FETs - Single
Description HiPerFET-TM Power MOSFETs ISOPLUS247-TM | MOSFET N-CH 500V 48A ISOPLUS247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 48A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 90mOhm at 27.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs 330nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 9400pF at 25V
Power Dissipation (Maximum) 400W
Temperature Range - Operating -40°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package ISOPLUS247
Manufacturer Package ISOPLUS247
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191134-IXFR55N50
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFR55N50 CAD Model

Description

The IXYS IXFR55N50 is an N-channel MOSFET transistor that is designed for use in discrete semiconductor products. It has a maximum drain-source breakdown voltage of 500V and a continuous drain current of 48A. This device has a maximum power dissipation of 400W and is packaged in an ISOPLUS247 package. It has a medium popularity and is currently facing a balanced supply and demand status. The manufacturer pack quantity is 30 and the MSL level is 1 (Unlimited).

  • Manufacturer: IXYS
  • Channel Type: N-channel
  • Maximum Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 48A
  • Maximum Power Dissipation: 400W
  • Package: ISOPLUS247
  • Popularity: medium
  • Supply and Demand Status: balanced
  • Manufacturer Pack Quantity: 30
  • MSL Level: 1 (Unlimited)

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