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Same model may have multiple batches, images only for reference.
IXFX26N90 Real Image
Same model may have multiple batches, images only for reference.

IXFX26N90

Part No IXFX26N90
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 26A PLUS 247 / N-Channel 900 V 26A (Tc) 560W (Tc) Through Hole PLUS247™-3
Datasheet
IXFX26N90 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10800 pF @ 25 V
Power Dissipation (Max) 560W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package PLUS247™-3
Case / Package TO-247-3 Variant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1323881-IXFX26N90
Ultra Librarian 3D Model Ultra Librarian IXFX26N90 CAD Model

Description

The IXYS IXFX26N90 is a MOSFET (Metal Oxide) electronic component that is designed for use in electronic circuits.

  • Manufacturer: IXYS
  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 13A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
  • Win Source Part Number: 1323881-IXFX26N90
  • Package: Tube
  • Standard Package: 30
  • Mounting Type: Through Hole
  • Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single

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