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IXFX26N90

Part No IXFX26N90
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 26A PLUS 247 / N-Channel 900 V 26A (Tc) 560W (Tc) Through Hole PLUS247™-3
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10800 pF @ 25 V
Power Dissipation (Max) 560W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package PLUS247™-3
Case / Package TO-247-3 Variant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1323881-IXFX26N90
Ultra Librarian 3D Model Ultra Librarian IXFX26N90 CAD Model

Description

The IXYS IXFX26N90 is a MOSFET (Metal Oxide) electronic component that is designed for use in electronic circuits.

  • Manufacturer: IXYS
  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 13A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
  • Win Source Part Number: 1323881-IXFX26N90
  • Package: Tube
  • Standard Package: 30
  • Mounting Type: Through Hole
  • Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single

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