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Same model may have multiple batches, images only for reference.
IXGA30N60C3C1 Real Image
Same model may have multiple batches, images only for reference.

IXGA30N60C3C1

Part No IXGA30N60C3C1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 60A 220W TO263  /  IGBT PT 600 V 60 A 220 W Surface Mount TO-263AA
Datasheet
IXGA30N60C3C1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr IXYS
Series GenX3™
Package Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Power - Max 220 W
Switching Energy 120µJ (on), 90µJ (off)
Input Type Standard
Gate Charge 38 nC
Td (on/off) @ 25°C 17ns/42ns
Test Condition 300V, 20A, 5Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AA
Base Product Number IXGA30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1185751-IXGA30N60C3C1
Ultra Librarian 3D Model Ultra Librarian IXGA30N60C3C1 CAD Model

Description

The IXGA30N60C3C1 is a GenX3™ PT IGBT transistor from IXYS, with a voltage collector emitter breakdown (Max) of 600 V and a maximum collector current (Ic) of 60A.

  • Voltage Collector Emitter Breakdown (Max): 600 V
  • Maximum Collector Current (Ic): 60A
  • Maximum Vce(on): 3V @ 15V and 20A
  • Gate Charge: 38 nC
  • Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Product Category: Discrete Semiconductor Products
  • Sub Category: IGBTs
  • Mounting Type: SMD (SMT)
  • Power Dissipation: 220 W
  • Operating Temperature: -55°C to 150°C (TJ)

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