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Same model may have multiple batches, images only for reference.
IXGH15N120B2D1 Real Image
Same model may have multiple batches, images only for reference.

IXGH15N120B2D1

Part No IXGH15N120B2D1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 30A 192W TO247AD
Datasheet
IXGH15N120B2D1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 30A
Pulsed Collector Current 60A
Collector-emitter saturation voltage(Max) 3.3V @ 15V, 15A
Maximum Power Dissipation 192W
Total Switching Energy(Ets) 1.4mJ (off)
Input Type Standard
Gate Charge 86nC
Turn-on and Turn-off delay time 25ns/165ns
Testing Conditions 960V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr) 165ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049561-IXGH15N120B2D1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXGH15N120B2D1 CAD Model

Description

The IXYS IXGH15N120B2D1 is an IGBT (Insulated Gate Bipolar Transistor) that comes in a TO-247AD package.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Current Collector: 30A
  • Gate Charge: 86nC
  • Collector-Emitter Saturation Voltage: 3.3V @ 15V and 15A
  • Total Switching Energy: 1.4mJ (off)
  • Turn-On and Turn-Off Delay Time: 25ns/165ns
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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