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IXGH20N60 Real Image1 IXGH20N60 Real Image2
Same model may have multiple batches, images only for reference.
IXGH20N60 Real Image1 IXGH20N60 Real Image2
IXGH20N60 Real Image1 IXGH20N60 Real Image2
Same model may have multiple batches, images only for reference.

IXGH20N60

Part No IXGH20N60
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 40A 150W TO247AD / IGBT 600 V 40 A 150 W Through Hole TO-247AD
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>IGBTs>Single IGBTs
Mfr IXYS
Series -
Package Tube
Product Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Power - Max 150 W
Switching Energy 1.5mJ (off)
Input Type Standard
Gate Charge 100 nC
Td (on/off) @ 25°C 100ns/600ns
Test Condition 480V, 20A, 82Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Base Product Number IXGH20
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30 pcs
Win Source Part Number 1382387-IXGH20N60
Ultra Librarian 3D Model Ultra Librarian IXGH20N60 CAD Model

Description

The IXGH20N60 is a high-power IGBT transistor designed for use in various applications.

  • Power Rating: 150W
  • Description: making it suitable for high-power circuits and devices.
  • Voltage Breakdown: 600V
  • Maximum Collector Current: 40A
  • Description: allowing for efficient and reliable performance.
  • Vce(on): 2.5V @ 15V and 20A
  • Description: it offers low power dissipation and high efficiency.
  • Mounting Type: Through-Hole
  • Package: TO-247-3
  • Description: ensuring easy installation and secure connections.
  • Manufacturer: IXYS
  • Description: a leading manufacturer of semiconductor products, this IGBT transistor is of high quality and reliability.
  • Description: It is an ideal choice for applications requiring high power handling and efficient switching.

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