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IXTA220N04T2-7

Part No IXTA220N04T2-7
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 220A TO-263-7 / Trans MOSFET N-CH 40V 220A 7-Pin(6+Tab) D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Series TrenchT2
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 112nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6820pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 360W (Tc)
Rds On (Maximum) @ Id, Vgs 3.5 mOhm @ 50A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package TO-263-7 (IXTA..7)
Package TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 777643-IXTA220N04T2-7
Popularity Medium
Supply and Demand Status Balance
Family Name IXTA220N04T2-7
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IXTA220N04T2-7 CAD Model

Description

The IXYS MOSFET product is a TrenchT2 series product manufactured by IXYS.

  • Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
  • Mounting Technology: SMD
  • Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
  • Drive Voltage (max Rds on, min Rds on): 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 6820pF @ 25V
  • Rds On (maximum) @ Id, Vgs: 3.5 mOhm @ 50A, 10V
  • Gate Charge (Qg) (maximum) @ Vgs: 112nC @ 10V
  • Power Dissipation (maximum): 360W (Tc)
  • Alternative Part Cross-Reference: IRF2804STRR7PP, FDB024N04AL7, IPB020N04N G, and IPB160N04S402DXTMA1

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8075 $52.4875
155+ $0.6626 $102.7030
235+ $0.6419 $150.8465
325+ $0.6212 $201.8900
420+ $0.6005 $252.2100
560+ $0.5384 $301.5040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,200 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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