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Same model may have multiple batches, images only for reference.
IXTA3N150HV Real Image
Same model may have multiple batches, images only for reference.

IXTA3N150HV

Part No IXTA3N150HV
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1500V 3A TO263  /  N-Channel 1500 V 3A (Tc) 250W (Tc) Surface Mount TO-263AA
Datasheet
IXTA3N150HV Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38.6 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1375 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IXTA3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1169935-IXTA3N150HV
Ultra Librarian 3D Model Ultra Librarian IXTA3N150HV CAD Model

Description

The IXTA3N150HV is a MOSFET transistor designed for use in electronic devices that require a single N-channel FET.

  • Channel Type: N-Channel
  • Maximum Drain to Source Voltage: 1500V
  • Continuous Drain Current: 3A
  • On-Resistance: 7.3 Ohm
  • Maximum Gate-Source Voltage: ±30V
  • Package: TO-263-3
  • Maximum Power Dissipation: 250W

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $20.0984 $60.2952
7+ $16.4910 $115.4370
10+ $15.9756 $159.7560
13+ $15.4603 $200.9839
17+ $14.9449 $254.0633
23+ $13.3989 $308.1747
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 600 pieces
MOQ: 3 pcs
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