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IXTA3N50D2

Name: IXTA3N50D2
Brand: IXYS
SKU: 608553
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXTA3N50D2
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	Depletion Mode MOSFET
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Channel Type Type	N
Technology	MOSFET
Drain Source Voltage	500V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Gate Charge (Qg) (Maximum) @ Vgs	40nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds	1070pF @ 25V
Vgs (Maximum)	±20V
FET Feature	Depletion Mode
Power Dissipation (Maximum)	125W (Tc)
Rds On (Maximum) @ Id, Vgs	1.5 Ohm @ 1.5A, 0V
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting	SMD
Manufacturer Package	TO-263 (IXTA)
Package	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number	1191241-IXTA3N50D2
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Family Name	IXTA3N50D2
Introduction Date	December 09, 2009
ECCN	EAR99
Country of Origin	Republic of Korea
Estimated EOL Date	2024
Ultra Librarian 3D Model	Ultra Librarian IXTA3N50D2 CAD Model

Description

The IXTA3N50D2 MOSFET is a depletion mode FET with a maximum continuous drain current of 3A (Tc) and a drain-source voltage of 500V by IXYS.

Gate Charge (Qg): 40nC @ 5V
Input Capacitance (Ciss): 1070pF @ 25V
Win Source Part Number: 1191241-IXTA3N50D2
Packaging: Tube
Maximum Power Dissipation: 125W (Tc)
Maximum Vgs: ±20V
Channel Type: N
Rds On: 1.5 Ohm @ 1.5A, 0V
RoHS compliant: Yes
Mounted on: SMD in the open market
Supply and demand status: Limited

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