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IXTA70N085T

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Part No	IXTA70N085T
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 85V 70A TO263 / N-Channel 85 V 70A (Tc) 176W (Tc) Surface Mount TO-263AA
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	TrenchMV™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	85 V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	13.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2570 pF @ 25 V
Power Dissipation (Max)	176W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263AA
Package / Case	TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Base Product Number	IXTA70
Standard Package	50
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1346724-IXTA70N085T
Ultra Librarian 3D Model	Ultra Librarian IXTA70N085T CAD Model

Alternative Products

Description

The IXTA70N085T is an N-channel MOSFET transistor with a maximum drain-source voltage of 85V and a continuous drain current of 70A (Tc).

Drain-Source Voltage: 85V
Continuous Drain Current: 70A (Tc)
Gate-Source Voltage: ±20V
Gate Charge: 59nC @ 10V
Maximum Power Dissipation: 176W (Tc)
Maximum Rds On: 13.5mOhm @ 25A, 10V
Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting: Easy to Install
Supplier Device Package: TO-263AA
Operating Temperature: -55°C to 175°C (TJ)
REACH: Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095

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