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Same model may have multiple batches, images only for reference.
IXTA90N20X3 Real Image
Same model may have multiple batches, images only for reference.

IXTA90N20X3

Part No IXTA90N20X3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 90A TO263 / N-Channel 200 V 90A (Tc) 390W (Tc) Surface Mount TO-263 (D2Pak)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Ultra X3
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5420 pF @ 25 V
Power Dissipation (Max) 390W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Base Product Number IXTA90
Standard Package 50
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346875-IXTA90N20X3
Ultra Librarian 3D Model Ultra Librarian IXTA90N20X3 CAD Model

Description

The 1346875-IXTA90N20X3 is a N-channel MOSFET transistor from IXYS. It has a maximum drain to source voltage of 200V and can handle continuous drain current of 90A.

  • Drain to Source Voltage: 200V
  • Continuous Drain Current: 90A
  • Rds On Resistance: 12mOhm @ 45A and 10V
  • Power Dissipation: 390W @ Tc
  • Mounting Type: Surface Mount
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Gate Charge: 78 nC @ 10V
  • Input Capacitance: 5420 pF @ 25V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Series: Ultra X3

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