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Same model may have multiple batches, images only for reference.
IXTQ40N50L2 Real Image
Same model may have multiple batches, images only for reference.

IXTQ40N50L2

Part No IXTQ40N50L2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 40A TO3P / N-Channel 500 V 40A (Tc) 540W (Tc) Through Hole TO-3P
Datasheet
IXTQ40N50L2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Linear L2™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 320 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10400 pF @ 25 V
Power Dissipation (Max) 540W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Base Product Number IXTQ40
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346753-IXTQ40N50L2
Ultra Librarian 3D Model Ultra Librarian IXTQ40N50L2 CAD Model

Description

IXYS IXTQ40N50L2 is a MOSFET (Metal Oxide) N-Channel transistor that is part of the Linear L2™ series.

  • Package: Tube (standard package of 30)
  • Mounting: Through-Hole
  • Drain to Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 40A (Tc) @ 25°C
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max): 170mOhm @ 20A, 10V
  • Vgs(th) (Max): 4.5V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
  • Ideal for: power supplies, motor control, and lighting

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