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IXTD3N60P-2J

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Part No	IXTD3N60P-2J
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 3A DIE / N-Channel 600 V 3A (Tc) 70W (Tc) Surface Mount Die
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	PolarHV™
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.9Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	9.8 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	411 pF @ 25 V
Power Dissipation (Max)	70W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die
Base Product Number	IXTD3N
Standard Package	1
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
California Prop 65	Warning Information
Win Source Part Number	1346725-IXTD3N60P-2J
Ultra Librarian 3D Model	Ultra Librarian IXTD3N60P-2J CAD Model

Alternative Products

Description

It is an N-channel MOSFET type transistor that has a drain to source voltage (Vdss) of 600V and a current-continuous drain (Id) of 3A (Tc).

Drain to Source Voltage (Vdss): 600V
Current-Continuous Drain (Id): 3A (Tc)
Power Dissipation (max): 70W (Tc)
Package: Die
Mounting Style: Surface Mount
Drive Voltage (max Rds On, min Rds On): 10V

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