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Same model may have multiple batches, images only for reference.
IXTF230N085T Real Image
Same model may have multiple batches, images only for reference.

IXTF230N085T

Part No IXTF230N085T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 85V 130A I4PAC / N-Channel 85 V 130A (Tc) 200W (Tc) Through Hole ISOPLUS i4-PAC™
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchMV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250mA
Gate Charge (Qg) (Max) @ Vgs 187 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9900 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS i4-PAC™
Package / Case i4-Pac™-5
Base Product Number IXTF230
Standard Package 25
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346798-IXTF230N085T
Ultra Librarian 3D Model Ultra Librarian IXTF230N085T CAD Model

Description

The 1346798-IXTF230N085T is an N-Channel MOSFET transistor from the IXYS.

  • Drain to Source Voltage: 85V
  • Maximum Power Dissipation: 200W (Tc)
  • Mounting Type: Through-hole
  • Package: i4-Pac™-5 package
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Continuous Drain Current: 130A (Tc)
  • Maximum On-Resistance: 5.3mOhm @ 50A and 10V
  • Maximum Gate Charge: 187nC @ 10V
  • Input Capacitance: 9,900pF @ 25V

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