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IXTH50N20

Part No IXTH50N20
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 50A TO-247AD
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 220nC @ 10V
Max Input Capacitance 4600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049816-IXTH50N20
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTH50N20 CAD Model

Description

IXYS IXTH50N20 is a MOSFET type electronic component.

  • Status: Active
  • Supply and Demand Status: Balanced
  • Power Dissipation: 300W (Tc)
  • Maximum Continuous Drain Current: 50A (Tc)
  • Maximum Rds On: 45 mOhm @ 25A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: TO-247 (IXTH)
  • Drain-Source Breakdown Voltage: 200V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $22.9412 $68.8236
6+ $18.8235 $112.9410
9+ $18.2353 $164.1177
12+ $17.6470 $211.7640
15+ $17.0588 $255.8820
20+ $15.2941 $305.8820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 301 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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