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IXTH75N10L2

Part No IXTH75N10L2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A TO-247
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 215nC @ 10V
Max Input Capacitance 8100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 400W (Tc)
Maximum Rds On at Id,Vgs 21 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049832-IXTH75N10L2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH75N10L2 CAD Model

Description

The IXTH75N10L2 is a N-Channel MOSFET from IXYS.

  • Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-247 (IXTH)
  • Mounting: Through-Hole
  • Technology: MOSFET
  • Polarity: N-Channel
  • Drive Voltage: 10V
  • Supply and Demand: Sufficient
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 75A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 215nC @ 10V
  • Maximum Rds On @ Id, Vgs: 21 mOhm @ 500mA, 10V
  • Max Input Capacitance: 8100pF @ 25V
  • Maximum Gate-Source Voltage: ±20V

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