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Same model may have multiple batches, images only for reference.
IXTH90P10P Real Image
Same model may have multiple batches, images only for reference.

IXTH90P10P

Part No IXTH90P10P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 90A TO-247
Datasheet
IXTH90P10P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 5800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 462W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049841-IXTH90P10P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH90P10P CAD Model

Description

The IXYS MOSFET is a P-Channel polarity electronic component with a maximum power dissipation of 462W (Tc).

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 90A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 120nC @ 10V
  • Maximum Rds On @ Id,Vgs: 25 mOhm @ 45A, 10V
  • Mounting: Through a Hole
  • Package: TO-247-3
  • Technology: MOSFET
  • Category: Discrete Semiconductor Products
  • Drive Voltage: 10V
  • Status: Active
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Sufficient

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