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IXTK110N20L2

Part No IXTK110N20L2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 110A TO264 / N-Channel 200 V 110A (Tc) 960W (Tc) Through Hole TO-264 (IXTK)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series Linear L2™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 500 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V
Power Dissipation (Max) 960W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-264 (IXTK)
Package / Case TO-264-3, TO-264AA
Base Product Number IXTK110
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Win Source Part Number 1029585-IXTK110N20L2
Ultra Librarian 3D Model Ultra Librarian IXTK110N20L2 CAD Model

Description

The IXTK110N20L2 is an N-channel MOSFET transistor from IXYS.

  • Maximum Drain-Source Voltage: 200V
  • Maximum Continuous Drain Current: 110A
  • Package: TO-264-3
  • Operating Temperature Range: -55°C to 150°C
  • Ideal for: power supplies and motor control applications

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