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Same model may have multiple batches, images only for reference.
IXTN60N50L2 Real Image
Same model may have multiple batches, images only for reference.

IXTN60N50L2

Part No IXTN60N50L2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 53A SOT227B / N-Channel 500 V 53A (Tc) 735W (Tc) Chassis Mount SOT-227B
Datasheet
IXTN60N50L2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 610 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 24000 pF @ 25 V
Power Dissipation (Max) 735W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXTN60
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1324568-IXTN60N50L2
Ultra Librarian 3D Model Ultra Librarian IXTN60N50L2 CAD Model

Description

This electronic component is manufactured by IXYS and has the Win Source Part Number 1324568-IXTN60N50L2.

  • Category: Transistors - FETs, MOSFETs - Single
  • Technology: MOSFET (Metal Oxide)
  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
  • Power Dissipation (Max): 735W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10V
  • RoHS Compliant: Yes

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