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IXTN660N04T4

Name: IXTN660N04T4
Brand: IXYS
SKU: 420943
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IXTN660N04T4
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	40V/660A TRENCHT4 PWR MOSFET SOT
Datasheet	IXTN660N04T4 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Bulk
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	40V
Continuous Drain Current at 25°C	660A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	860nC @ 10V
Max Input Capacitance	44000pF @ 25V
Maximum Gate-Source Voltage	±15V
FET Feature	Current Sensing
Power Dissipation (Max)	1040W (Tc)
Maximum Rds On at Id,Vgs	0.85 mOhm @ 100A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Chassis Mount
Case / Package	SOT-227B
Dimension	SOT-227-4, miniBLOC
Win Source Part Number	1006591-IXTN660N04T4
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian IXTN660N04T4 CAD Model

Alternative Products

Description

The IXYS MOSFET is a high-performance current sensing N-channel FET designed for use in discrete semiconductor products.

Power Dissipation: 1040W (Tc)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current Rating @ 25°C: 660A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Package: SOT-227B
Dimensions: SOT-227-4, miniBLOC
Maximum Rds On @ Id,Vgs: 0.85 mOhm @ 100A, 10V
Popularity: Medium

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IXTN660N04T4

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