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Same model may have multiple batches, images only for reference.
IXTP102N15T IXYS
Same model may have multiple batches, images only for reference.

IXTP102N15T

Part No IXTP102N15T
Manufacturer IXYS
Catalog FETs - Single
Description Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated | MOSFET N-CH 150V 102A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 150V
Id - Continuous Drain Current 102A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 18mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 87nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5220pF at 25V
Power Dissipation (Maximum) 455W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191273-IXTP102N15T
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP102N15T CAD Model

Description

IXYS's 1191273-IXTP102N15T is a through hole mounted N-channel MOSFET transistor with a drain-source breakdown voltage of 150V.

  • The transistor has a continuous drain current of: 102A
  • a maximum on-state resistance of: 18mOhm @ 500mA and 10V.
  • The transistor is packaged in a: TO-220AB case and can operate in a temperature range of -55°C to 175°C. and the supply and demand status is balanced.

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