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Same model may have multiple batches, images only for reference.
IXTP130N065T2 Real Image
Same model may have multiple batches, images only for reference.

IXTP130N065T2

Part No IXTP130N065T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 65V 130A TO-220
Datasheet
IXTP130N065T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 65V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 79nC @ 10V
Max Input Capacitance 4800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 6.6 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049861-IXTP130N065T2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTP130N065T2 CAD Model

Description

The IXYS 1049861-IXTP130N065T2 is a MOSFET technology based N-Channel polarity discrete semiconductor product.

  • Technology: MOSFET
  • Polarity: N-Channel
  • Power Dissipation: 250W (Tc)
  • Drive Voltage: 10V
  • Packaging: Tube/Rail
  • Mounting: Through Hole
  • Temperature Range: -55°C to 175°C (TJ)
  • Category: Discrete Semiconductor Products
  • Popularity: High
  • Supply and Demand Status: Sufficient

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