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G20N50C Vishay G20N50C Real Image
Same model may have multiple batches, images only for reference.
G20N50C Vishay G20N50C Real Image
G20N50C Vishay G20N50C Real Image
Same model may have multiple batches, images only for reference.

G20N50C

Part No G20N50C
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 20A TO247
Datasheet
G20N50C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 76nC @ 10V
Max Input Capacitance 2942pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 204382-G20N50C
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian G20N50C CAD Model

Description

The Vishay G20N50C is an N-channel MOSFET component.

  • Drain-Source Breakdown Voltage: 500V
  • Maximum Continuous Drain Current: 20A (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Power Dissipation: 250W (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 76nC @ 10V
  • Maximum Rds On: 270 mOhm @ 10A, 10V
  • Mounting Type: Through-Hole

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