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Same model may have multiple batches, images only for reference.
IXTP180N10T Real Image
Same model may have multiple batches, images only for reference.

IXTP180N10T

Part No IXTP180N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 180A TO-220 / Trans MOSFET N-CH 100V 180A Automotive 3-Pin(3+Tab) TO-220
Datasheet
IXTP180N10T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series TrenchMV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 151nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6900pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 480W (Tc)
Rds On (Maximum) @ Id, Vgs 6.4 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 777660-IXTP180N10T
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Family Name IXTP180N10T
Introduction Date November 30, 2018
Estimated EOL Date 2035
Ultra Librarian 3D Model Ultra Librarian IXTP180N10T CAD Model

Description

The IXYS IXTP180N10T is a TO-220-3 packaged MOSFET transistor manufactured by IXYS.

  • Power Rating: 480W
  • Continuous Drain Current @ 25°C: 180A
  • Breakdown Voltage: 100V
  • On-State Resistance @ 25A and 10V: 6.4mOhm
  • Gate Charge: 151nC
  • Input Capacitance @ 25V: 6900pF
  • Operating Temperature Range: -55°C to 175°C

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Quantity Unit Price Ext. Price
5+ $11.6955 $58.4775
11+ $9.5963 $105.5593
17+ $9.2965 $158.0405
23+ $8.9966 $206.9218
29+ $8.6967 $252.2043
39+ $7.7970 $304.0830
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