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Same model may have multiple batches, images only for reference.
IXTP1R4N60P Real Image
Same model may have multiple batches, images only for reference.

IXTP1R4N60P

Part No IXTP1R4N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.4A TO-220
Datasheet
IXTP1R4N60P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 25μA
Max Gate Charge 5.2nC @ 10V
Max Input Capacitance 140pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 9 Ohm @ 700mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049874-IXTP1R4N60P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP1R4N60P CAD Model

Description

The IXTP1R4N60P MOSFET from IXYS is a through-hole mounted N-channel polarity transistor.

  • Power Dissipation: 50W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current at 25°C: 1.4A (Tc)
  • Maximum Rds On at Id,Vgs: 9 Ohm @ 700mA, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 5.5V @ 25μA
  • Supply and Demand Status: balanced

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