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Same model may have multiple batches, images only for reference.
IXTP220N055T Real Image
Same model may have multiple batches, images only for reference.

IXTP220N055T

Part No IXTP220N055T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 220A TO-220
Datasheet
IXTP220N055T Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 158nC @ 10V
Max Input Capacitance 7200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 430W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049878-IXTP220N055T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTP220N055T CAD Model

Description

IXYS's MOSFET is a high-power N-Channel transistor with a Drain-Source Breakdown Voltage of 55V and a Continuous Drain Current of 220A (Tc).

  • Power Dissipation: 430W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 158nC @ 10V
  • Maximum Input Capacitance: 7200pF @ 25V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-220AB
  • Market Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Product Status: Obsolete (EOL)

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135+ $2.5689 $346.8015
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