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Same model may have multiple batches, images only for reference.
IXTQ102N20T Real Image
Same model may have multiple batches, images only for reference.

IXTQ102N20T

Part No IXTQ102N20T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 102A TO3P
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 102A (Tc)
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Gate Charge 114nC @ 10V
Max Input Capacitance 6800pF @ 25V
Power Dissipation (Max) 750W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049907-IXTQ102N20T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTQ102N20T CAD Model

Description

The IXTQ102N20T is a N-channel MOSFET transistor manufactured by IXYS.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 102A (Tc)
  • Maximum On-Resistance: 23mOhm @ 500mA and 10V
  • Gate Charge: 114nC @ 10V
  • Input Capacitance: 6800pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-3P
  • Power Dissipation: 750W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.8110 $59.0550
12+ $9.6905 $116.2860
19+ $9.3878 $178.3682
26+ $9.0852 $236.2152
33+ $8.7826 $289.8258
45+ $7.8736 $354.3120
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Availability: 17,700 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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