The IXYS IXTQ86N20T is an N-channel MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current @ 25°C of 86A (Tc).

• Drain-Source Breakdown Voltage: 200V
• Continuous Drain Current @ 25°C: 86A (Tc)
• Gate-Source Threshold Voltage: 5V @ 1mA
• Maximum Gate Charge: 90nC @ 10V
• Category: Discrete Semiconductor Products
• Popularity: 31%
• Supply and Demand Status: Sufficient
• Quantity per Package: 30
• Power Dissipation (Max): 480W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Temperature Range: -55°C to 175°C (TJ)