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Same model may have multiple batches, images only for reference.
IXTT20N50D Real Image
Same model may have multiple batches, images only for reference.

IXTT20N50D

Part No IXTT20N50D
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 20A TO268 / N-Channel 500 V 20A (Tc) 400W (Tc) Surface Mount TO-268AA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Depletion
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 330mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250mA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 400W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Base Product Number IXTT20
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346741-IXTT20N50D
Ultra Librarian 3D Model Ultra Librarian IXTT20N50D CAD Model

Description

The 1346741-IXTT20N50D is a depletion mode N-Channel MOSFET transistor from the IXYS.

  • Drain to Source Voltage: 500V
  • Maximum Power Dissipation: 400W (Tc)
  • Mounting Type: Surface Mountable
  • Package: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
  • Maximum Gate-Source Voltage: ±30V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Continuous Drain Current: 20A (Tc)
  • Maximum On-Resistance: 330mOhm @ 10A and 10V
  • Maximum Gate Charge: 125nC @ 10V
  • Input Capacitance: 2,500pF @ 25V
  • Ideal for Applications: power supplies, motor control, and DC-DC converters

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