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Same model may have multiple batches, images only for reference.
IXTV110N25TS Real Image
Same model may have multiple batches, images only for reference.

IXTV110N25TS

Part No IXTV110N25TS
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 110A PLUS220SMD / N-Channel 250 V 110A (Tc) 694W (Tc) Surface Mount PLUS-220SMD
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V
Power Dissipation (Max) 694W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PLUS-220SMD
Package / Case PLUS-220SMD
Base Product Number IXTV110
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346817-IXTV110N25TS
Ultra Librarian 3D Model Ultra Librarian IXTV110N25TS CAD Model

Description

IXTV110N25TS is an obsolete electronic component from IXYS.

  • Type: N-channel MOSFET
  • Drain to Source Voltage: 250V
  • Current - Continuous Drain: 110A @ 25°C
  • Power Dissipation: 694W (Tc)
  • Gate Charge (Qg): 157 nC @ 10V
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
  • Vgs(th) @ Id: 4.5V @ 1mA
  • Package: PLUS-220SMD
  • Technology: MOSFET (Metal Oxide)
  • Supply Voltage: 4.5V to 35V
  • Drive Voltage (Max Rds On, Min Rds On): 10V

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Quantity Unit Price Ext. Price
1+ $104.8128 $104.8128
2+ $101.5372 $203.0744
3+ $98.2616 $294.7848
4+ $94.9860 $379.9440
5+ $85.1605 $425.8025
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