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Same model may have multiple batches, images only for reference.
IXTX102N65X2 Real Image
Same model may have multiple batches, images only for reference.

IXTX102N65X2

Part No IXTX102N65X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 102A PLUS247-3 / N-Channel 650 V 102A (Tc) 1040W (Tc) Through Hole PLUS247™-3
Datasheet
IXTX102N65X2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Ultra X2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 51A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 10900 pF @ 25 V
Power Dissipation (Max) 1040W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS247™-3
Package / Case TO-247-3 Variant
Base Product Number IXTX102
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346641-IXTX102N65X2
Ultra Librarian 3D Model Ultra Librarian IXTX102N65X2 CAD Model

Description

The IXYS IXTX102N65X2 is a N-channel MOSFET transistor from IXYS.

  • Drain to Source Voltage (Vdss): 650 V
  • Power Dissipation: 1040W (Tc)
  • Mounting Type: through hole
  • Package/Case: TO-247-3 Variant
  • Input Capacitance (Ciss): 10900 pF @ 25 V
  • Rds On (Max): 30mOhm @ 51A, 10V
  • Quality Product From: IXYS, a trusted supplier of semiconductor products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $26.9438 $53.8876
5+ $22.1078 $110.5390
8+ $21.4169 $171.3352
10+ $20.7260 $207.2600
13+ $20.0352 $260.4576
17+ $17.9626 $305.3642
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