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Same model may have multiple batches, images only for reference.
IXTX32P60P Real Image
Same model may have multiple batches, images only for reference.

IXTX32P60P

Part No IXTX32P60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 600V 32A PLUS247-3 / P-Channel 600 V 32A (Tc) 890W (Tc) Through Hole PLUS247™-3
Sample
Rohs State rohs
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarP™
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11100 pF @ 25 V
Power Dissipation (Max) 890W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS247™-3
Package / Case TO-247-3 Variant
Base Product Number IXTX32
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346857-IXTX32P60P
Ultra Librarian 3D Model Ultra Librarian IXTX32P60P CAD Model

Description

IXTX32P60P is a P-channel MOSFET from IXYS.

  • Series: PolarP™
  • Package: Tube
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Power Dissipation (max): 890W (Tc)
  • Mounting: Through-hole
  • Package/Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
  • Vgs (Max): ±20V
  • Operating Temperature Range: -55°C ~ 150°C (TJ)
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V

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