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Same model may have multiple batches, images only for reference.
IXTT96N20P Real Image
Same model may have multiple batches, images only for reference.

IXTT96N20P

Part No IXTT96N20P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel Engancement Mode
Datasheet
IXTT96N20P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series PolarHT
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 145nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4800pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 600W (Tc)
Rds On (Maximum) @ Id, Vgs 24 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package TO-268
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Win Source Part Number 1191301-IXTT96N20P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXTT96N20P
Introduction Date May 01, 2004
ECCN EAR99
Ultra Librarian 3D Model Ultra Librarian IXTT96N20P CAD Model

Description

The IXYS IXTT96N20P is a MOSFET electronic component with a maximum power dissipation of 600W (Tc) from IXYS.

  • Series: PolarHT
  • Channel Type: N-Type
  • Continuous Drain Current: 96A (Tc)
  • Input Capacitance: 4800pF @ 25V
  • Gate Charge: 145nC @ 10V
  • Rds On (Max): 24 mOhm @ 500mA, 10V

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