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IXTX60N50L2

Name: IXTX60N50L2
Brand: IXYS
SKU: 1346803
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXTX60N50L2
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 500V 60A PLUS247-3 / N-Channel 500 V 60A (Tc) 960W (Tc) Through Hole PLUS247™-3
Datasheet	IXTX60N50L2 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	Linear L2™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	100mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	610 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	24000 pF @ 25 V
Power Dissipation (Max)	960W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS247™-3
Package / Case	TO-247-3 Variant
Base Product Number	IXTX60
Standard Package	30
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
California Prop 65	Warning Information
Win Source Part Number	1346803-IXTX60N50L2
Ultra Librarian 3D Model	Ultra Librarian IXTX60N50L2 CAD Model

Alternative Products

Description

IXTX60N50L2 is an N-channel MOSFET transistor from IXYS.

Series: Linear L2™
Product: Discrete Semiconductor
Drain to Source Voltage (Vdss): 500 V
Power Dissipation: 960W (Tc)
Mounting Type: Through Hole
Package: TO-247-3 Variant
Vgs (Max): ±30V
Operating Temperature: -55°C to 150°C (TJ)
Current (Id): 60A (Tc)
Rds On (Max): 100mOhm @ 30A, 10V
Gate Charge (Qg) (Max): 610 nC @ 10 V
Input Capacitance (Ciss): 24000 pF @ 25 V

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IXTX60N50L2

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