The IXTX90P20P is a P-channel MOSFET transistor with a maximum drain-source voltage of 200V and a continuous drain current of 90A (Tc).

• Drain-Source Voltage: 200V (Max)
• Gate-Source Voltage: ±20V
• Gate Charge: 205nC @ 10V
• Power Dissipation: 890W (Tc) (Max)
• Rds On: 44mOhm (Max) @ 22A, 10V
• Application: Discrete Semiconductor Products - FETs, MOSFETs - Single FETs, MOSFETs
• Package: TO-247-3 Variant
• Supplier Device Package: PLUS247™-3
• Operating Temperature Range: -55°C to 150°C (TJ)
• REACH: unaffected
• ECCN: EAR99
• HTSUS: 8541.29.0095