The IXTY14N60X2 is a N-Channel MOSFET transistor designed for use in Discrete Semiconductor Products - Transistors - FETs, MOSFETs. It features an Ultra X2 series, with a Drain to Source Voltage (Vdss) of 600 V and a Power Dissipation (Max) of 180W (Tc).

• Supplier: IXYS
• Series: Ultra X2
• Drain to Source Voltage (Vdss): 600 V
• Power Dissipation (Max): 180W (Tc)
• Mounting Type: Surface Mount
• Package/Case: TO-252-3, DPak (2 Leads + Tab) , SC-63
• Temperature Range: -55°C ~ 150°C (TJ)
• Gate-Source Voltage (Vgs): ±30V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V