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IXTY8N70X2

Part No IXTY8N70X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL 700V 8A TO252 / N-Channel 700 V 8A (Tc) 150W (Tc) Surface Mount TO-252AA
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Ultra X2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 10 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab) , SC-63
Base Product Number IXTY8
Standard Package 70
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346717-IXTY8N70X2
Ultra Librarian 3D Model Ultra Librarian IXTY8N70X2 CAD Model

Description

The IXTY8N70X2 is a N-Channel MOSFET transistor from the Ultra X2 series of IXYS.

  • Drain to Source Voltage: 700V
  • Maximum Power Dissipation: 150W (Tc)
  • Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Vgs(max): ±30V
  • Operating Temperature Range: -55°C ~ 150°C (TJ)
  • Continuous Drain Current: 8A (Tc)
  • Maximum Rds On: 500mOhm @ 500mA, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V

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