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Same model may have multiple batches, images only for reference.
IXTX170P10P Real Image
Same model may have multiple batches, images only for reference.

IXTX170P10P

Part No IXTX170P10P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 170A PLUS247-3 / P-Channel 100 V 170A (Tc) 890W (Tc) Through Hole PLUS247™-3
Datasheet
IXTX170P10P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarP™
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12600 pF @ 25 V
Power Dissipation (Max) 890W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS247™-3
Package / Case TO-247-3 Variant
Base Product Number IXTX170
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346643-IXTX170P10P
Ultra Librarian 3D Model Ultra Librarian IXTX170P10P CAD Model

Description

The IXYS IXTX170P10P is a P-channel MOSFET transistor from the PolarP™ series manufactured by IXYS.

  • Drain-to-Source Voltage: 100V
  • Continuous Drain Current: 170A (Tc)
  • Maximum On-Resistance: 12mOhm @ 500mA and 10V
  • Gate Charge: 240nC @ 10V
  • Input Capacitance: 12600pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-247-3 Variant
  • Power Dissipation: 890W (Tc)
  • Suitable for: use in various applications such as power supplies, motor drives, and lighting systems.

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