The KTC3531T is a NPN Epitaxial Planar Transistor manufactured by KEC. This transistor is designed for high-voltage switching and amplification applications. It features a high breakdown voltage, making it suitable for use in circuits where high voltage levels are present.

Applications

• High-voltage switching circuits
• Amplification circuits
• Power supplies
• Inverter circuits
• Electronic ballast circuits

Features

• NPN Epitaxial Planar Transistor
• High breakdown voltage (VCBO = 300V)
• High collector current (IC = 0.7A)
• Low collector saturation voltage
• High transition frequency

Benefits

• Suitable for high-voltage applications
• Provides reliable switching performance
• Offers good amplification characteristics
• Contributes to efficient power conversion
• Easy to implement in various circuit designs

Additional Details

The KTC3531T transistor has a collector-base voltage (VCBO) of 300V, a collector-emitter voltage (VCEO) of 300V, and an emitter-base voltage (VEBO) of 5V. The collector current (IC) is rated at 0.7A, and the collector power dissipation (PC) is 0.8W. The transistor is available in a TO-92 package. Its high transition frequency allows it to be used in high-frequency applications. The low collector saturation voltage ensures efficient switching performance, minimizing power loss. The KTC3531T is a versatile transistor that can be used in a wide range of electronic circuits requiring high voltage and reliable performance. It is commonly used in applications where high voltage switching and amplification are needed, offering a cost-effective and efficient solution for circuit designers.