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LTC1165CS8#PBF

Part No LTC1165CS8#PBF
Manufacturer Linear Technology
Catalog PMIC - Gate Drivers
Description IC MOSFET DVR HI-SIDE TRPL 8SOIC / Driver 3-OUT High Side Inv 8-Pin SOIC N Tube
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits (ICs)
Manufacturer Linear Technology
Packaging Tube
Driven Configuration High-Side
Channel Type Independent
Number of Drivers 3
Gate Type N-Channel MOSFET
Operating Supply Voltage 1.8 V ~ 6 V
Input Type Inverting
Operating Temperature Range 0°C ~ 70°C (TA)
Mounting SMD
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Package 8-SOIC
Win Source Part Number 781786-LTC1165CS8#PBF
Popularity Medium
Supply and Demand Status Balance
Family Name LTC1165
Introduction Date January 11, 1996
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2031
Ultra Librarian 3D Model Ultra Librarian LTC1165CS8#PBF CAD Model

Description

Linear Technology LTC1165CS8#PBF High-Side N-Channel MOSFET Driver

The LTC1165CS8#PBF from Linear Technology is a high-side N-channel MOSFET driver designed to operate in environments requiring high efficiency and reliability. This component is ideal for driving N-Channel MOSFETs in high-side switch applications, providing the necessary gate voltage to fully enhance the MOSFET for optimal performance.

Encased in an 8-lead narrow SOIC package, the LTC1165 is compact and suitable for space-constrained applications. Its part number, ending with #PBF, indicates that it is a lead-free ("Pb-free") product, adhering to current environmental standards and regulations for electronic components.

With an operating voltage range of 4.5V to 15V, the LTC1165CS8#PBF can cater to a wide array of applications, from industrial control systems to automotive electronics. Its unique design includes an internal charge pump that generates the necessary gate drive voltage, which can be higher than the supply voltage, to fully enhance an N-Channel MOSFET even when the supply voltage is as low as 4.5V.

The driver features a fast switching speed, which is crucial for applications where efficiency and reduced power loss are important. It also has an under-voltage lockout feature that ensures the driver is only operational when the supply voltage is within an acceptable range, thus protecting the MOSFET and the system from potential damage due to insufficient gate voltage.

Additionally, the LTC1165CS8#PBF is equipped with a powerful 1A peak output, which ensures that the MOSFET's gate capacitance is charged and discharged quickly, minimizing transition losses. The driver's robust design also includes protection against short-circuit conditions, which contributes to the overall reliability and longevity of the system it is integrated into.

Overall, the LTC1165CS8#PBF high-side N-channel MOSFET driver is a versatile and reliable solution for driving MOSFETs in a variety of high-side switching applications. Its compact size, high efficiency, and protective features make it an excellent choice for designers looking to optimize their power management systems.

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