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DS1265W-100

Part No DS1265W-100
Manufacturer Maxim Integrated
Catalog SRAM
Description IC NVSRAM 8MBIT PARALLEL 36EDIP
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Integrated Circuits (ICs)
Features NVSRAM (Non-Volatile SRAM) Memory IC 8Mb (1M x 8) Parallel 100 ns 36-EDIP
Manufacturer Maxim Integrated
Package Tube
Part Status Obsolete
Operating Temperature Range 0°C ~ 70°C (TA)
Mounting Through Hole
Package 36-DIP Module (0.610", 15.49mm)
Case / Package 36-EDIP
Family Name DS1265W
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Quantity per package 9
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869390-DS1265W-100
Ultra Librarian 3D Model Ultra Librarian DS1265W-100 CAD Model

Description

Maxim Integrated DS1265W-100 Nonvolatile SRAM

The Maxim Integrated DS1265W-100 is a robust, high-capacity 1M Nonvolatile SRAM designed to provide a reliable data storage solution that combines the access speed of static RAM with the data retention capabilities of nonvolatile memory. This innovative product is engineered to preserve the contents of its memory in the absence of power, making it an ideal choice for critical data storage applications across various industries.

The DS1265W-100 features a 1-Megabit (128k x 8) memory array, offering ample space for storing configuration parameters, status registers, data logs, and other vital information that must be preserved during power loss. It operates over a wide voltage range of 4.5V to 5.5V and is encased in a durable 32-pin EDIP (Encapsulated Dual In-line Package) with a built-in lithium energy cell.

One of the key advantages of the DS1265W-100 is its partitioned data protection, which allows for the selective write protection of memory blocks, ensuring that critical data segments are safeguarded from inadvertent changes. The device employs an automatic power-fail chip deselect and write protection feature, triggering a nonvolatile save cycle whenever the VCC supply falls below a preset voltage threshold.

Additionally, the DS1265W-100 boasts a fast access time of 100ns, enabling swift data retrieval and storage, which is essential for high-performance computing environments. Its infinite read and write endurance ensures that the memory can be accessed repeatedly without degradation, further enhancing the reliability of the system it is integrated into.

For ease of implementation, the DS1265W-100 is designed to be pin-compatible with JEDEC standard SRAMs, allowing for straightforward upgrades to existing systems without requiring significant redesign. The nonvolatile functionality is transparent to the user, with no additional support circuitry needed, simplifying the integration process.

In summary, the Maxim Integrated DS1265W-100 Nonvolatile SRAM is a cutting-edge memory solution that provides fast access times, high data reliability, and power-fail data protection. Its robust design and ease of use make it suitable for a wide array of applications, including industrial control systems, telecommunications, and portable computing devices where data integrity is paramount.

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