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Same model may have multiple batches, images only for reference.
8550SS-D-AP Real Image
Same model may have multiple batches, images only for reference.

8550SS-D-AP

Part No 8550SS-D-AP
Manufacturer Micro Commercial Co
Catalog Transistors (BJT) - Single
Description TRANS PNP 25V 1.5A TO92 / Bipolar (BJT) Transistor PNP 25 V 1.5 A 100MHz 1 W Through Hole TO-92
Datasheet
8550SS-D-AP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Micro Commercial Co
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 1.5 A
Voltage - Collector Emitter Breakdown (Max) 25 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V
Power - Max 1 W
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0075
Other Names 353-8550SS-D-APTB
Standard Package 2,000
Win Source Part Number 1041224-8550SS-D-AP
Ultra Librarian 3D Model Ultra Librarian 8550SS-D-AP CAD Model

Description

The 8550SS-D-AP is a PNP bipolar transistor designed for single current circuits.

  • Package: Tape and Box (TB)
  • Mounting: Through-Hole
  • Power - Max: 1W
  • V(BR)CEO - Collector-Emitter Breakdown Voltage: 25V
  • Ic - Collector Current (Max): 1.5A
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ Ib, Ic
  • Cutoff: 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Frequency Transition: 100MHz
  • Package/Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Operating Temperature: -55°C to 150°C (TJ)
  • Manufacturer: Micro Commercial Co

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